Superconductivity in compensated and uncompensated semiconductors

Fault Location in Uncompensated and Series-Compensated Parallel Lines

Accurate and robust fault location algorithm for parallel lines compensated with one three-phase bank of series capacitors in each the line is presented. The algorithm is categorized as one-end fundamental frequency based technique which offsets the series compensation effect and the reactance effect resulting from the remote end infeed under resistive faults as well as takes the countermeasure...

Focus on Superconductivity in Semiconductors.

Fluctuation theory of donor-acceptor pair luminescence in compensated semiconductors

We propose a self-consistent quantitative fluctuation theory of donor-acceptor pair luminescence in compensated semiconductors at constant excitation. The theory succeeds in explanation of main peculiarities of luminescence, including lineshape and position. It also allows to extract such an important material parameter as compensation with high dgreee of precision. 1 Introduction Although dope...

Superconductivity in doped sp3 semiconductors: the case of the clathrates.

We present a joint experimental and theoretical study of the superconductivity in doped silicon clathrates. The critical temperature in Ba(8)@Si-46 is shown to strongly decrease with applied pressure. These results are corroborated by ab initio calculations using MacMillan's formulation of the BCS theory with the electron-phonon coupling constant lambda calculated from perturbative density func...

Microstrip-Slot Coupler Design—Part I: S-Parameters of Uncompensated and Compensated Couplers

Using the even-odd mode anafysis of four-port networks with double symmetry, the scattering parameters of the microstrip-slot coupler are derived from the evenand odd-mode parameters of the coupler cross section. The uncompensated coupler and the coupler compensated by extending tbe slot fines are treated and desigo specifications are given covering the compensation slot lines. A comparison wit...